{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11288570","patent":{"patent_number":"US-11288570","title":"Semiconductor channel based neuromorphic synapse device including trap-rich layer","assignee":null,"inventors":[],"filing_date":"2018-10-24T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G06N","G06N","G06N","G06N","G11C","G11C"],"num_claims":7,"abstract":"A semiconductor channel based neuromorphic synapse device 1 including a trap-rich layer may be provided that includes: a first to a third semiconductor regions which are formed on a substrate and are sequentially arranged; a word line which is electrically connected to the first semiconductor region; a trap-rich layer which surrounds the second semiconductor region; and a bit line which is electrically connected to the third semiconductor region. When a pulse with positive (+) voltage is applied to the word line, a concentration of electrons emitted from the trap-rich layer to the second semiconductor region increases and a resistance of the second semiconductor region decreases. When a pulse with negative (−) voltage is applied to the word line, a concentration of electrons trapped in the trap-rich layer from the second semiconductor region increases and the resistance of the second semiconductor region increases."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor channel based neuromorphic synapse device including trap-rich layer","description":"A semiconductor channel based neuromorphic synapse device 1 including a trap-rich layer may be provided that includes: a first to a third semiconductor regions which are formed on a substrate and are ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11288570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11288570","citation_suggestion":"Patentable. \"Semiconductor channel based neuromorphic synapse device including trap-rich layer\" (US-11288570). https://patentable.app/patents/US-11288570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11288570","json":"https://patentable.app/api/llm-context/US-11288570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T07:46:23.686Z"}