{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289142","patent":{"patent_number":"US-11289142","title":"Nonvolatile memory sensing circuit including variable current source","assignee":null,"inventors":[],"filing_date":"2020-10-07T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":13,"abstract":"The present invention is directed to a nonvolatile memory device including a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resistance state of a magnetic memory cell in the memory sectors. The read circuit includes a first input node through which a reference current passes; a second input node through which a read current from the memory sectors passes; a sense amplifier configured to compare input voltages and having first and second input terminals; a reference resistor connected to the first input node at one end and the first input terminal at the other end; a variable current source connected to the reference resistor at one end and ground at the other end; and a second current source connected to the second input node at one end and ground at the other end."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile memory sensing circuit including variable current source","description":"The present invention is directed to a nonvolatile memory device including a plurality of memory slices, each memory slice including one or more memory sectors and a read circuit for sensing the resis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289142","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289142","citation_suggestion":"Patentable. \"Nonvolatile memory sensing circuit including variable current source\" (US-11289142). https://patentable.app/patents/US-11289142","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289142","json":"https://patentable.app/api/llm-context/US-11289142","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:27:49.653Z"}