{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289145","patent":{"patent_number":"US-11289145","title":"Memory cell, memory cell arrangement, and methods thereof","assignee":null,"inventors":[],"filing_date":"2020-10-30T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":26,"abstract":"According to various aspects, a memory cell is provided, the memory cell may include a field-effect transistor; a first control node and a second control node, a first capacitor structure including a first electrode connected to the first control node, a second electrode connected to a gate region of the field-effect transistor, and a remanent-polarizable region disposed between the first electrode and the second electrode of the first capacitor structure; and a second capacitor structure including a first electrode connected to the second control node, a second electrode connected to the gate region of the field-effect transistor. In some aspects, the first capacitor structure may have a first capacitance and the second capacitor structure may have a second capacitance different from the first capacitance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory cell, memory cell arrangement, and methods thereof","description":"According to various aspects, a memory cell is provided, the memory cell may include a field-effect transistor; a first control node and a second control node, a first capacitor structure including a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289145","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289145","citation_suggestion":"Patentable. \"Memory cell, memory cell arrangement, and methods thereof\" (US-11289145). https://patentable.app/patents/US-11289145","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289145","json":"https://patentable.app/api/llm-context/US-11289145","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:37:22.898Z"}