{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289147","patent":{"patent_number":"US-11289147","title":"Sensing techniques for a memory cell","assignee":null,"inventors":[],"filing_date":"2021-02-02T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Methods, systems, and devices for sensing techniques for a memory cell are described to enable a latch to sense a logic state of a memory cell. A transistor coupled with a memory cell may boost a first voltage associated with the memory cell to a second voltage via one or more parasitic capacitances of the transistor. The second voltage may be developed on a first node of a sense component, and the second voltage may be shifted to a third voltage at a first node of the sense component by applying a voltage to a shift node coupled with a capacitor of the sense component. Similar boosting and shifting operations may be performed to develop a reference voltage on a second node of the sense component. The sense component may sense the state of the memory cell by comparing with the reference voltage."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Sensing techniques for a memory cell","description":"Methods, systems, and devices for sensing techniques for a memory cell are described to enable a latch to sense a logic state of a memory cell. A transistor coupled with a memory cell may boost a firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289147","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289147","citation_suggestion":"Patentable. \"Sensing techniques for a memory cell\" (US-11289147). https://patentable.app/patents/US-11289147","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289147","json":"https://patentable.app/api/llm-context/US-11289147","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:17:39.444Z"}