{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289306","patent":{"patent_number":"US-11289306","title":"Ion beam etching utilizing cryogenic wafer temperatures","assignee":null,"inventors":[],"filing_date":"2017-08-21T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":10,"abstract":"The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random access memory (STT-RAM) device. In various embodiments, the substrate may be cooled to a low temperature via a cooled substrate support during particular processing steps. The cooled substrate support may have beneficial impacts in terms of reducing the degree of diffusion-related damage in a resulting device. Further, the use of a non-cooled substrate support during certain other processing steps can likewise have beneficial impacts in terms of reducing diffusion-related damage, depending on the particular step. In some implementations, the cooled substrate support may be used in a process to preferentially deposit a material (in some cases a reactant) on certain portions of the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Ion beam etching utilizing cryogenic wafer temperatures","description":"The embodiments herein relate to methods and apparatus for etching features in semiconductor substrates. In a number of cases, the features may be etched while forming a spin-torque-transfer random ac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289306","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289306","citation_suggestion":"Patentable. \"Ion beam etching utilizing cryogenic wafer temperatures\" (US-11289306). https://patentable.app/patents/US-11289306","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289306","json":"https://patentable.app/api/llm-context/US-11289306","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:38:02.525Z"}