{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289332","patent":{"patent_number":"US-11289332","title":"Directional processing to remove a layer or a material formed over a substrate","assignee":null,"inventors":[],"filing_date":"2019-07-15T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a plurality of openings in the multi-layer resist to expose a portion of the hard mask layer. Ion are directionally provided at an angle to the multi-layer resist to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In one embodiment, the multi-layer resist is directionally etched by directing etch ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer. In another embodiment, the multi-layer resist is directionally implanted by directing implant ions at an angle to predominately contact sidewalls of the plurality of openings in the multi-layer resist rather than the hard mask layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Directional processing to remove a layer or a material formed over a substrate","description":"A method of fabricating a semiconductor device includes forming a hard mask layer over a substrate. A multi-layer resist is formed over the hard mask layer. The multi-layer resist is etched to form a ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289332","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289332","citation_suggestion":"Patentable. \"Directional processing to remove a layer or a material formed over a substrate\" (US-11289332). https://patentable.app/patents/US-11289332","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289332","json":"https://patentable.app/api/llm-context/US-11289332","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:14:57.945Z"}