{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289334","patent":{"patent_number":"US-11289334","title":"Epitaxial wafer including boron and germanium and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2019-08-27T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration and germanium concentration is at least 8.5E+18 atoms/cm3 and the germanium concentration is 6 times or less the boron concentration; forming an epitaxial layer on the semiconductor substrate such that the semiconductor substrate and the epitaxial layer constitute the epitaxial wafer; and annealing the epitaxial wafer for 1 hour or longer at a temperature of 1,000° C. or less."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Epitaxial wafer including boron and germanium and method of fabricating the same","description":"An epitaxial wafer and a method of fabricating an epitaxial wafer, the method including providing a semiconductor substrate doped with both boron and germanium such that a sum of boron concentration a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289334","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289334","citation_suggestion":"Patentable. \"Epitaxial wafer including boron and germanium and method of fabricating the same\" (US-11289334). https://patentable.app/patents/US-11289334","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289334","json":"https://patentable.app/api/llm-context/US-11289334","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:01:51.008Z"}