{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289336","patent":{"patent_number":"US-11289336","title":"Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device","assignee":null,"inventors":[],"filing_date":"2020-01-07T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Present disclosure provides a method for multi-level etch. The method includes providing a substrate, forming a first reference feature over a control region of the substrate, forming an etchable layer over the first reference feature and a target region over the substrate, patterning a masking layer over the etchable layer, the masking layer having a first opening projecting over the control region and a second opening projecting over the target region, and removing a portion of the etchable layer through the first opening and the second opening until the first reference feature is reached. A semiconductor sensing device manufactured by the multi-level etch is also disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device","description":"Present disclosure provides a method for multi-level etch. The method includes providing a substrate, forming a first reference feature over a control region of the substrate, forming an etchable laye","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289336","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289336","citation_suggestion":"Patentable. \"Method for multi-level etch, semiconductor sensing device, and method for manufacturing semiconductor sensing device\" (US-11289336). https://patentable.app/patents/US-11289336","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289336","json":"https://patentable.app/api/llm-context/US-11289336","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:47:06.812Z"}