{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289338","patent":{"patent_number":"US-11289338","title":"Method for improved critical dimension uniformity in a semiconductor device fabrication process","assignee":null,"inventors":[],"filing_date":"2020-07-09T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Exemplary methods of patterning a device layer are described, including operations of patterning a protector layer and forming a first opening in a first patterning layer to expose a first portion of the protector layer and a first portion of the hard mask layer, which are then are exposed to a first etch to form a first opening in the first portion of the hard mask layer. A second opening is formed in a second patterning layer to expose a second portion of the protector layer and a second portion of the hard mask layer. The second portion of the protector layer and the second portion of the hard mask layer are exposed to an etch to form a second opening in the second portion of the hard mask layer. Exposed portions of the device layer are then etched through the first opening and the second opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for improved critical dimension uniformity in a semiconductor device fabrication process","description":"Exemplary methods of patterning a device layer are described, including operations of patterning a protector layer and forming a first opening in a first patterning layer to expose a first portion of ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289338","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289338","citation_suggestion":"Patentable. \"Method for improved critical dimension uniformity in a semiconductor device fabrication process\" (US-11289338). https://patentable.app/patents/US-11289338","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289338","json":"https://patentable.app/api/llm-context/US-11289338","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:42:25.664Z"}