{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289366","patent":{"patent_number":"US-11289366","title":"Method of manufacturing semiconductor structure","assignee":null,"inventors":[],"filing_date":"2020-11-04T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"A method of manufacturing a semiconductor structure includes the following operations. A buffer layer is formed over a substrate. A first top hard mask is formed on the buffer layer, in which the first top hard mask has a first trench to expose a first portion of the buffer layer. A spacer layer is formed to cover a sidewall of the first trench and an upper surface of the first top hard mask and the first portion of the buffer layer to form a second trench over the first portion. The top portion and the bottom portion are etched to form a thinned top portion and a thinned bottom portion. A second top hard mask is formed in the second trench. The thinned top portion and the vertical portion of the spacer layer are removed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing semiconductor structure","description":"A method of manufacturing a semiconductor structure includes the following operations. A buffer layer is formed over a substrate. A first top hard mask is formed on the buffer layer, in which the firs","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289366","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289366","citation_suggestion":"Patentable. \"Method of manufacturing semiconductor structure\" (US-11289366). https://patentable.app/patents/US-11289366","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289366","json":"https://patentable.app/api/llm-context/US-11289366","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:00:14.636Z"}