{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289369","patent":{"patent_number":"US-11289369","title":"Low-k dielectric with self-forming barrier layer","assignee":null,"inventors":[],"filing_date":"2020-06-08T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low-k dielectric with self-forming barrier layer","description":"A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosph","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289369","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289369","citation_suggestion":"Patentable. \"Low-k dielectric with self-forming barrier layer\" (US-11289369). https://patentable.app/patents/US-11289369","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289369","json":"https://patentable.app/api/llm-context/US-11289369","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:04:16.399Z"}