{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289371","patent":{"patent_number":"US-11289371","title":"Top vias with selectively retained etch stops","assignee":null,"inventors":[],"filing_date":"2020-01-23T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Integrated chips and methods of forming the same include forming conductive lines on an underlying layer, between regions of dielectric material. The regions of dielectric material are selectively patterned, leaving at least one dielectric remnant region. An interlayer dielectric is formed over the underlying layer and the at least one dielectric remnant region, between the conductive lines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Top vias with selectively retained etch stops","description":"Integrated chips and methods of forming the same include forming conductive lines on an underlying layer, between regions of dielectric material. The regions of dielectric material are selectively pat","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289371","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289371","citation_suggestion":"Patentable. \"Top vias with selectively retained etch stops\" (US-11289371). https://patentable.app/patents/US-11289371","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289371","json":"https://patentable.app/api/llm-context/US-11289371","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:05:07.859Z"}