{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289375","patent":{"patent_number":"US-11289375","title":"Fully aligned interconnects with selective area deposition","assignee":null,"inventors":[],"filing_date":"2020-03-23T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Interconnect structures and methods for forming the interconnect structures generally include forming a dielectric layer over a substrate. The dielectric layer includes a dielectric layer top surface. A metal line is formed in the dielectric layer. The metal line includes a sacrificial upper region and a lower region. The sacrificial upper region is formed separately from the lower region and the lower region includes a lower region top surface positioned below the dielectric layer top surface. The sacrificial upper region is removed, thereby exposing the lower region top surface and forming a trench defined by the lower region top surface and sidewalls of the dielectric layer. An interconnect structure is deposited such that at least a portion of the interconnect structure fills the trench, thereby defining a fully aligned top via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fully aligned interconnects with selective area deposition","description":"Interconnect structures and methods for forming the interconnect structures generally include forming a dielectric layer over a substrate. The dielectric layer includes a dielectric layer top surface.","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289375","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289375","citation_suggestion":"Patentable. \"Fully aligned interconnects with selective area deposition\" (US-11289375). https://patentable.app/patents/US-11289375","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289375","json":"https://patentable.app/api/llm-context/US-11289375","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:10.201Z"}