{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289429","patent":{"patent_number":"US-11289429","title":"Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same","assignee":null,"inventors":[],"filing_date":"2019-10-07T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Memory stack structures are formed through the vertically alternating sequence. Divider trenches and slit trenches are formed such that the divider trenches laterally extend along a first horizontal direction and divide the vertically alternating sequence into a plurality of alternating stacks of insulating layers and sacrificial material layers, and the slit trenches laterally extend along a second horizontal direction that is perpendicular to the first horizontal direction. The sacrificial material layers are replaced with electrically conductive layers employing the divider trenches as a conduit for an etchant and for a reactant. Each of the divider trenches and the slit trenches are filled with material portions to provide a plurality of divider trench fill structures in the divider trenches and to provide a plurality of slit trench fill structures in the slit trenches."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same","description":"A vertically alternating sequence of continuous insulating layers and continuous sacrificial material layers is formed over a substrate. Memory stack structures are formed through the vertically alter","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289429","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289429","citation_suggestion":"Patentable. \"Three-dimensional memory die containing stress-compensating slit trench structures and methods for making the same\" (US-11289429). https://patentable.app/patents/US-11289429","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289429","json":"https://patentable.app/api/llm-context/US-11289429","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:46:42.687Z"}