{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289450","patent":{"patent_number":"US-11289450","title":"Semiconductor structure and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2019-12-13T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first die dielectric layer; a second die, disposed over the first die and vertically overlapping the first die; an inter-die structure, disposed between and separating the first die and the second die; and a first through via, penetrating the first die substrate and protruding from a top surface and a bottom surface of the first die substrate, wherein a top of the first through via is disposed in the inter-die structure and a bottom of the first through via is disposed in the first die dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and manufacturing method thereof","description":"A semiconductor structure includes a substrate; a first die, disposed over the substrate, wherein the first die includes a first die dielectric layer, and a first die substrate disposed on the first d","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289450","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289450","citation_suggestion":"Patentable. \"Semiconductor structure and manufacturing method thereof\" (US-11289450). https://patentable.app/patents/US-11289450","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289450","json":"https://patentable.app/api/llm-context/US-11289450","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:01.371Z"}