{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289486","patent":{"patent_number":"US-11289486","title":"Semiconductor memory device, method of driving the same and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2019-03-27T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","H01L","H01L","H01L","H01L","G11C","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor memory device includes a plurality of memory cell transistors arranged along a common semiconductor layer. Each of the plurality of memory cell transistors comprises a first source/drain region and a second source/drain region formed in the common semiconductor layer; a gate stack formed on a portion of the common semiconductor layer between the first source/drain region and the second source/drain region; and an electrical floating portion in the portion of the common semiconductor layer, a charge state of the electrical floating portion being adapted to adjust a threshold voltage and a channel conductance of the memory cell transistor. The plurality of memory cell transistors connected in series with each other along the common semiconductor layer provide a memory string."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device, method of driving the same and method of fabricating the same","description":"A semiconductor memory device includes a plurality of memory cell transistors arranged along a common semiconductor layer. Each of the plurality of memory cell transistors comprises a first source/dra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289486","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289486","citation_suggestion":"Patentable. \"Semiconductor memory device, method of driving the same and method of fabricating the same\" (US-11289486). https://patentable.app/patents/US-11289486","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289486","json":"https://patentable.app/api/llm-context/US-11289486","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:11:29.003Z"}