{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289501","patent":{"patent_number":"US-11289501","title":"Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies","assignee":null,"inventors":[],"filing_date":"2019-05-20T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":38,"abstract":"Some embodiments include a memory array which has a vertical stack of alternating insulative levels and wordline levels. A channel material extends vertically along the stack. The channel material includes a semiconductor composition and has first segments alternating with second segments. The first segments are adjacent the wordline levels and the second segments are adjacent the insulative levels. The first segments have a first dopant distribution and the second segments have a second dopant distribution which is different from the first dopant distribution. Some embodiments include methods of forming integrated assemblies."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies","description":"Some embodiments include a memory array which has a vertical stack of alternating insulative levels and wordline levels. A channel material extends vertically along the stack. The channel material inc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289501","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289501","citation_suggestion":"Patentable. \"Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assemblies\" (US-11289501). https://patentable.app/patents/US-11289501","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289501","json":"https://patentable.app/api/llm-context/US-11289501","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:37:34.070Z"}