{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289506","patent":{"patent_number":"US-11289506","title":"Semiconductor memory device and method for manufacturing same","assignee":null,"inventors":[],"filing_date":"2020-03-05T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film and a conductive film. The method includes forming a trench in the stacked body. The trench extends in one direction and divides the conductive film. The method includes burying a diblock copolymer in the trench. The method includes phase-separating the diblock copolymer into a plurality of first blocks and an insulative second block extending in a stacking direction of the insulating film and the conductive film. The method includes forming a plurality of holes by removing the first blocks. The method includes forming charge accumulation layers on inner surfaces of the holes. And, the method includes forming a plurality of semiconductor pillars extending in the stacking direction by burying a semiconductor material in the holes."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method for manufacturing same","description":"According to one embodiment, a method for manufacturing a semiconductor memory device includes forming a stacked body by alternately stacking an insulating film and a conductive film. The method inclu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289506","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289506","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing same\" (US-11289506). https://patentable.app/patents/US-11289506","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289506","json":"https://patentable.app/api/llm-context/US-11289506","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:25:47.062Z"}