{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289509","patent":{"patent_number":"US-11289509","title":"Double-gated ferroelectric field-effect transistor","assignee":null,"inventors":[],"filing_date":"2017-09-29T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"A ferroelectric field-effect transistor (FeFET) includes first and second gate electrodes, source and drain regions, a semiconductor region between and physically connecting the source and drain regions, a first gate dielectric between the semiconductor region and the first gate electrode, and a second gate dielectric between the semiconductor region and the second gate electrode. The first gate dielectric includes a ferroelectric dielectric. In an embodiment, a memory cell includes this FeFET, with the first gate electrode being electrically connected to a wordline and the drain region being electrically connected to a bitline. In another embodiment, a memory array includes wordlines extending in a first direction, bitlines extending in a second direction, and a plurality of such memory cells at crossing regions of the wordlines and the bitlines. In each memory cell, the wordline is a corresponding one of the wordlines and the bitline is a corresponding one of the bitlines."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Double-gated ferroelectric field-effect transistor","description":"A ferroelectric field-effect transistor (FeFET) includes first and second gate electrodes, source and drain regions, a semiconductor region between and physically connecting the source and drain regio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289509","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289509","citation_suggestion":"Patentable. \"Double-gated ferroelectric field-effect transistor\" (US-11289509). https://patentable.app/patents/US-11289509","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289509","json":"https://patentable.app/api/llm-context/US-11289509","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:13:05.076Z"}