{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289570","patent":{"patent_number":"US-11289570","title":"Semiconductor device having optimized drain termination and method therefor","assignee":null,"inventors":[],"filing_date":"2018-08-24T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"Systems and methods of the disclosed embodiments include a semiconductor device having a semiconductor substrate. The semiconductor substrate has a first major surface, an opposing second major surface, a first doped region of a first conductivity type disposed beneath the first major surface, and a semiconductor region of the first conductivity type disposed between the first doped region and the second major surface. The semiconductor device may also include a trench isolation structure, comprising a conductive trench filling enclosed by an insulating trench liner. The trench isolation structure extends from the first major surface through the first doped region and into the semiconductor region. The semiconductor device may also include a semiconductor device structure disposed with a drain structure, and a connection structure formed between the conductive trench filling of the trench isolation structure and the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device having optimized drain termination and method therefor","description":"Systems and methods of the disclosed embodiments include a semiconductor device having a semiconductor substrate. The semiconductor substrate has a first major surface, an opposing second major surfac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289570","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289570","citation_suggestion":"Patentable. \"Semiconductor device having optimized drain termination and method therefor\" (US-11289570). https://patentable.app/patents/US-11289570","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289570","json":"https://patentable.app/api/llm-context/US-11289570","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:51:11.864Z"}