{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289573","patent":{"patent_number":"US-11289573","title":"Contact resistance reduction in nanosheet device structure","assignee":null,"inventors":[],"filing_date":"2019-03-01T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device includes a nanosheet stack structure including a semiconductor channel layer and a source/drain region in contact with an end portion of the semiconductor channel layer of the nanosheet stack structure. A trench formed in the source/drain region is filled with a metal-based material. The metal-based material filling the trench in the source/drain region mitigates the effect of source/drain material overfill on the contact resistance of the semiconductor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Contact resistance reduction in nanosheet device structure","description":"Techniques are provided to fabricate semiconductor devices having a nanosheet field-effect transistor device disposed on a semiconductor substrate. The nanosheet field-effect transistor device include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289573","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289573","citation_suggestion":"Patentable. \"Contact resistance reduction in nanosheet device structure\" (US-11289573). https://patentable.app/patents/US-11289573","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289573","json":"https://patentable.app/api/llm-context/US-11289573","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T08:25:29.296Z"}