{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289580","patent":{"patent_number":"US-11289580","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2020-06-15T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"In a method of manufacturing a semiconductor device, a single crystal oxide layer is formed over a substrate. After the single crystal oxide layer is formed, an isolation structure to define an active region is formed. A gate structure is formed over the single crystal oxide layer in the active region. A source/drain structure is formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"In a method of manufacturing a semiconductor device, a single crystal oxide layer is formed over a substrate. After the single crystal oxide layer is formed, an isolation structure to define an active","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289580","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289580","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11289580). https://patentable.app/patents/US-11289580","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289580","json":"https://patentable.app/api/llm-context/US-11289580","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T03:13:13.363Z"}