{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289593","patent":{"patent_number":"US-11289593","title":"Breakdown resistant HEMT substrate and device","assignee":null,"inventors":[],"filing_date":"2015-07-31T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"A compound semiconductor device structure having a main surface and a rear surface includes a silicon substrate including first and second substrate layers. The first substrate layer extends to the rear surface. The second substrate layer extends to a first side of the substrate that is opposite from the rear surface such that the first substrate layer is completely separated from the first side by the second substrate layer. A nucleation region is formed on the first side of the silicon substrate and includes a nitride layer. A lattice transition layer is formed on the nucleation region and includes a type III-V semiconductor nitride. The lattice transition layer is configured to alleviate stress arising in the silicon substrate due to lattice mismatch between the silicon substrate and other layers in the compound semiconductor device structure. The second substrate layer is configured to suppress an inversion layer in the silicon substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Breakdown resistant HEMT substrate and device","description":"A compound semiconductor device structure having a main surface and a rear surface includes a silicon substrate including first and second substrate layers. The first substrate layer extends to the re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289593","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289593","citation_suggestion":"Patentable. \"Breakdown resistant HEMT substrate and device\" (US-11289593). https://patentable.app/patents/US-11289593","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289593","json":"https://patentable.app/api/llm-context/US-11289593","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:06:54.689Z"}