{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289599","patent":{"patent_number":"US-11289599","title":"Power metal-oxide-semiconductor field effect transistor","assignee":null,"inventors":[],"filing_date":"2020-06-05T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device includes: a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second doping type, respectively; a first source/drain contact region and a second source/drain contact region having the second doping type and laterally spaced; and a gate electrode disposed laterally between the first and second source/drain contact regions, wherein the gate electrode comprises a first sidewall relatively closer to the first source/drain region and a second sidewall relatively closer to the second source/drain region, and wherein respective cross-sectional areas of the first and second sidewalls of the gate electrode are different from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power metal-oxide-semiconductor field effect transistor","description":"A semiconductor device includes: a first semiconductor region disposed over a second semiconductor region, wherein the first and second semiconductor regions have a first doping type and a second dopi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289599","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289599","citation_suggestion":"Patentable. \"Power metal-oxide-semiconductor field effect transistor\" (US-11289599). https://patentable.app/patents/US-11289599","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289599","json":"https://patentable.app/api/llm-context/US-11289599","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:45:05.544Z"}