{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289601","patent":{"patent_number":"US-11289601","title":"Negative capacitance semiconductor sensor","assignee":null,"inventors":[],"filing_date":"2019-12-17T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["G01N"],"num_claims":20,"abstract":"A semiconductor sensor includes a source element; a drain element; and a semiconductor channel element between the source element and the drain element, forming an electrically conductive channel. An insulator is positioned between the semiconductor channel element and a solution to be sensed. A reference contacts the solution and sets an electric potential of the solution. A bias voltage source generates an external sensor bias voltage for electrically biasing the reference electrode. A sensing surface interacts with the solution comprising analytes for generating a surface potential change at the sensing surface dependent on the concentration of analytes. The sensor further includes a ferroelectric capacitance element between the insulator and the bias voltage source for generating a negative capacitance for a differential gain between the external sensor bias voltage and an internal sensor bias voltage sensed at a surface of the channel element facing the insulator or ferroelectric capacitance element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Negative capacitance semiconductor sensor","description":"A semiconductor sensor includes a source element; a drain element; and a semiconductor channel element between the source element and the drain element, forming an electrically conductive channel. An ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289601","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289601","citation_suggestion":"Patentable. \"Negative capacitance semiconductor sensor\" (US-11289601). https://patentable.app/patents/US-11289601","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289601","json":"https://patentable.app/api/llm-context/US-11289601","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T12:45:25.889Z"}