{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11289613","patent":{"patent_number":"US-11289613","title":"Electronic device including a junction field-effect transistor","assignee":null,"inventors":[],"filing_date":"2019-11-05T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":18,"abstract":"An electronic device can include a JFET that can include a drain contact region, a channel region spaced apart from the drain contact region, and a gate region adjacent the channel region. In an embodiment, the gate region includes a relatively heavier doped portion and a relatively lighter portion closer to the drain contact region. In another embodiment, a gate field electrode can be extended beyond a field isolation structure and overlie a channel of the JFET. In a further embodiment, a region having relatively low dopant concentration can be along the drain side of the conduction path, where the region is between two other more heavily doped regions. In another embodiment, alternating conducting channel and gate regions can be used to allow lateral and vertical pinching off of the conducting channel regions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Electronic device including a junction field-effect transistor","description":"An electronic device can include a JFET that can include a drain contact region, a channel region spaced apart from the drain contact region, and a gate region adjacent the channel region. In an embod","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11289613","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11289613","citation_suggestion":"Patentable. \"Electronic device including a junction field-effect transistor\" (US-11289613). https://patentable.app/patents/US-11289613","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11289613","json":"https://patentable.app/api/llm-context/US-11289613","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T15:53:53.250Z"}