{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11291107","patent":{"patent_number":"US-11291107","title":"Semiconductor device","assignee":null,"inventors":[],"filing_date":"2021-02-11T00:00:00.000Z","publication_date":"2022-03-29T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"An object is to suppress the temperature rise of a semiconductor element due to the heat generation of a metal wire. A semiconductor device includes a printed circuit board including a first circuit pattern and a second circuit pattern, and a semiconductor element arranged on an upper surface of the first circuit pattern, in which, in the semiconductor element, a drain electrode is arranged on an upper surface thereof and a gate electrode and a source electrode are arranged on a lower surface thereof, the gate electrode and the source electrode are bonded to the upper surface of the first circuit pattern via a first bonding material, and the drain electrode is bonded to an upper surface of the second circuit pattern via a metal member connected to the upper surface of the semiconductor element."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device","description":"An object is to suppress the temperature rise of a semiconductor element due to the heat generation of a metal wire. A semiconductor device includes a printed circuit board including a first circuit p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11291107","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11291107","citation_suggestion":"Patentable. \"Semiconductor device\" (US-11291107). https://patentable.app/patents/US-11291107","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11291107","json":"https://patentable.app/api/llm-context/US-11291107","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:22:46.631Z"}