{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295786","patent":{"patent_number":"US-11295786","title":"3D dram structure with high mobility channel","assignee":null,"inventors":[],"filing_date":"2020-02-03T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C"],"num_claims":8,"abstract":"Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a single crystalline-like silicon layer and includes a first word line, a second word line, a first capacitor, and a second capacitor. Methods of forming stacked memory devices are also described."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D dram structure with high mobility channel","description":"Memory devices are described. The memory devices include a plurality of bit lines extending through a stack of alternating memory layers and dielectric layers. Each of the memory layers comprises a si","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295786","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295786","citation_suggestion":"Patentable. \"3D dram structure with high mobility channel\" (US-11295786). https://patentable.app/patents/US-11295786","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295786","json":"https://patentable.app/api/llm-context/US-11295786","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:24:07.036Z"}