{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295796","patent":{"patent_number":"US-11295796","title":"Apparatus and method for endurance of non-volatile memory banks via wear leveling and random swap injection","assignee":null,"inventors":[],"filing_date":"2021-06-10T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C","G06F","G06F","G06F","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G06F","G06F","G06F"],"num_claims":20,"abstract":"Endurance mechanisms are introduced for memories such as non-volatile memories for broad usage including caches, last-level cache(s), embedded memory, embedded cache, scratchpads, main memory, and storage devices. Here, non-volatile memories (NVMs) include magnetic random-access memory (MRAM), resistive RAM (ReRAM), ferroelectric RAM (FeRAM), phase-change memory (PCM), etc. In some cases, features of endurance mechanisms (e.g., randomizing mechanisms) are applicable to volatile memories such as static random-access memory (SRAM), and dynamic random-access memory (DRAM). The endurance mechanisms include a wear leveling scheme that uses index rotation, outlier compensation to handle weak bits, and random swap injection to mitigate wear out attacks."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Apparatus and method for endurance of non-volatile memory banks via wear leveling and random swap injection","description":"Endurance mechanisms are introduced for memories such as non-volatile memories for broad usage including caches, last-level cache(s), embedded memory, embedded cache, scratchpads, main memory, and sto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295796","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295796","citation_suggestion":"Patentable. \"Apparatus and method for endurance of non-volatile memory banks via wear leveling and random swap injection\" (US-11295796). https://patentable.app/patents/US-11295796","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295796","json":"https://patentable.app/api/llm-context/US-11295796","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:21:51.257Z"}