{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295813","patent":{"patent_number":"US-11295813","title":"Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating","assignee":null,"inventors":[],"filing_date":"2020-11-30T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C","G06F","G06F","G06F","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell further includes a nonvolatile memory comprising a resistance change element configured to store data stored in the floating body under any one of a plurality of predetermined conditions. A method of operating semiconductor memory to function as volatile memory, while having the ability to retain stored data when power is discontinued to the semiconductor memory is described."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating","description":"Semiconductor memory is provided wherein a memory cell includes a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the cell. The cell","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295813","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295813","citation_suggestion":"Patentable. \"Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating\" (US-11295813). https://patentable.app/patents/US-11295813","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295813","json":"https://patentable.app/api/llm-context/US-11295813","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T19:36:15.761Z"}