{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295954","patent":{"patent_number":"US-11295954","title":"Manufacturing method for a semiconductor device including a polysilicon resistor","assignee":null,"inventors":[],"filing_date":"2016-07-04T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"Polysilicon films (P1,P2) are simultaneously formed on a wafer (W1) and a monitor wafer (W2) under the same growth condition in a wafer process. At least one of a film thickness and phosphorus concentration of the polysilicon film (P2) formed on the monitor wafer (W2) is measured to obtain a measured value. One of a plurality of mask patterns (A,B,C) is selected based on the measured value. The polysilicon film (P1) formed on the wafer (W1) is etched using the selected mask pattern to form the polysilicon resistor (5)."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method for a semiconductor device including a polysilicon resistor","description":"Polysilicon films (P1,P2) are simultaneously formed on a wafer (W1) and a monitor wafer (W2) under the same growth condition in a wafer process. At least one of a film thickness and phosphorus concent","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295954","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295954","citation_suggestion":"Patentable. \"Manufacturing method for a semiconductor device including a polysilicon resistor\" (US-11295954). https://patentable.app/patents/US-11295954","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295954","json":"https://patentable.app/api/llm-context/US-11295954","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T23:07:54.637Z"}