{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295961","patent":{"patent_number":"US-11295961","title":"Method of manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-11-27T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of manufacturing a semiconductor device","description":"A method of manufacturing a semiconductor device is disclosed herein. The method includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a secon","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295961","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295961","citation_suggestion":"Patentable. \"Method of manufacturing a semiconductor device\" (US-11295961). https://patentable.app/patents/US-11295961","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295961","json":"https://patentable.app/api/llm-context/US-11295961","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T14:48:38.358Z"}