{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295977","patent":{"patent_number":"US-11295977","title":"Standard cell device and method of forming an interconnect structure for a standard cell device","assignee":null,"inventors":[],"filing_date":"2020-04-09T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","G06F","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A method of forming an interconnect structure for a standard cell semiconductor device is disclosed. In one aspect, the method includes forming metal lines along respective routing tracks, wherein forming the metal lines includes depositing, on a first dielectric layer covering the active regions of the cell, a metal layer and a capping layer on the metal layer; patterning the capping layer and the metal layer to form first and second capped off-center metal lines extending along first and second off-center tracks, respectively; forming spacer lines on sidewalls of the capped off-center metal lines; and embedding the spacer-provided capped off-center metal lines in a second dielectric layer. The method further includes patterning a set of trenches in the second dielectric layer. The set of trenches includes a center trench extending along a center track between the spacer-provided capped off-center lines, and a first and a second edge trench extending along first and second edge tracks, respectively, on mutually opposite outer sides of the spacer-provided capped off-center metal lines. The method further includes forming a center metal line in the center trench, and a first and a second edge metal line in the first and second edge trenches, respectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Standard cell device and method of forming an interconnect structure for a standard cell device","description":"A method of forming an interconnect structure for a standard cell semiconductor device is disclosed. In one aspect, the method includes forming metal lines along respective routing tracks, wherein for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295977","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295977","citation_suggestion":"Patentable. \"Standard cell device and method of forming an interconnect structure for a standard cell device\" (US-11295977). https://patentable.app/patents/US-11295977","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295977","json":"https://patentable.app/api/llm-context/US-11295977","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T14:08:49.010Z"}