{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295981","patent":{"patent_number":"US-11295981","title":"Semiconductor devices including through vias and methods of fabricating the same","assignee":null,"inventors":[],"filing_date":"2020-01-06T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"Disclosed are semiconductor devices including through vias and methods of fabricating the same. The methods may include forming a first structure including a metal pattern and a second structure on the first structure. The metal pattern includes an upper surface facing the second structure. The methods may also include etching the second structure to form a via hole exposing the metal pattern, oxidizing a first etch residue in the via hole to convert the first etch residue into an oxidized first etch residue, and removing the oxidized first etch residue. After removing the oxidized first etch residue, the upper surface of the metal pattern may include a first portion that includes a recess and has a first surface roughness and a second portion that is different from the first portion and has a second surface roughness. The first surface roughness may be greater than the second surface roughness."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices including through vias and methods of fabricating the same","description":"Disclosed are semiconductor devices including through vias and methods of fabricating the same. The methods may include forming a first structure including a metal pattern and a second structure on th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295981","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295981","citation_suggestion":"Patentable. \"Semiconductor devices including through vias and methods of fabricating the same\" (US-11295981). https://patentable.app/patents/US-11295981","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295981","json":"https://patentable.app/api/llm-context/US-11295981","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T05:56:42.818Z"}