{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11295984","patent":{"patent_number":"US-11295984","title":"Method for forming gate oxide","assignee":null,"inventors":[],"filing_date":"2021-01-13T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A method for forming a gate oxide film of a transistor device includes: step 1: forming a hard mask layer on the surface of a semiconductor substrate, etching the hard mask layer and the semiconductor substrate to form shallow trenches; step 2: performing an tilt-angle ion implantation to the upper area of the side surfaces of each shallow trench to form an upper doped region; step 3: filling a field oxide layer into the shallow trenches and removing the hard mask layer; and step 4: performing thermal oxidation to form a gate oxide film on the surface of an active region. The method can improve the morphology of the gate oxide film, thus increase the breakdown voltage threshold and reliability of the device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for forming gate oxide","description":"A method for forming a gate oxide film of a transistor device includes: step 1: forming a hard mask layer on the surface of a semiconductor substrate, etching the hard mask layer and the semiconductor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11295984","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11295984","citation_suggestion":"Patentable. \"Method for forming gate oxide\" (US-11295984). https://patentable.app/patents/US-11295984","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11295984","json":"https://patentable.app/api/llm-context/US-11295984","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T18:37:39.827Z"}