{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296020","patent":{"patent_number":"US-11296020","title":"Semiconductor device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2018-12-07T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"The present technology relates to a semiconductor device in which a MIM capacitive element can be formed without any process damage, and a method for manufacturing the semiconductor device. In a semiconductor device, wiring layers of a first multilayer wiring layer formed on a first semiconductor substrate and a second multilayer wiring layer formed on a second semiconductor substrate are bonded to each other by wafer bonding. The semiconductor device includes a capacitive element including an upper electrode, a lower electrode, and a capacitive insulating film between the upper electrode and the lower electrode. One electrode of the upper electrode and the lower electrode is formed with a first conductive layer of the first multilayer wiring layer and a second conductive layer of the second multilayer wiring layer. The present technology can be applied to a semiconductor device or the like formed by joining two semiconductor substrates, for example."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method for manufacturing the same","description":"The present technology relates to a semiconductor device in which a MIM capacitive element can be formed without any process damage, and a method for manufacturing the semiconductor device. In a semic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296020","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296020","citation_suggestion":"Patentable. \"Semiconductor device and method for manufacturing the same\" (US-11296020). https://patentable.app/patents/US-11296020","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296020","json":"https://patentable.app/api/llm-context/US-11296020","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T22:14:30.539Z"}