{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296077","patent":{"patent_number":"US-11296077","title":"Transistors with recessed silicon cap and method forming same","assignee":null,"inventors":[],"filing_date":"2019-06-03T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. A top portion of the semiconductor fin is formed of a first semiconductor material. A semiconductor cap layer is formed on a top surface and sidewalls of the semiconductor fin. The semiconductor cap layer is formed of a second semiconductor material different from the first semiconductor material. The method further includes forming a gate stack on the semiconductor cap layer, forming a gate spacer on a sidewall of the gate stack, etching a portion of the semiconductor fin on a side of the gate stack to form a first recess extending into the semiconductor fin, recessing the semiconductor cap layer to form a second recess directly underlying a portion of the gate spacer, and performing an epitaxy to grow an epitaxy region extending into both the first recess and the second recess."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistors with recessed silicon cap and method forming same","description":"A method includes forming a semiconductor fin protruding higher than top surfaces of isolation regions. A top portion of the semiconductor fin is formed of a first semiconductor material. A semiconduc","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296077","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296077","citation_suggestion":"Patentable. \"Transistors with recessed silicon cap and method forming same\" (US-11296077). https://patentable.app/patents/US-11296077","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296077","json":"https://patentable.app/api/llm-context/US-11296077","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T23:10:54.006Z"}