{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296082","patent":{"patent_number":"US-11296082","title":"Multi-gate device and related methods","assignee":null,"inventors":[],"filing_date":"2020-07-30T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method of fabricating a semiconductor device includes providing a dummy structure having a plurality of channel layers, an inner spacer disposed between adjacent channels of the plurality of channel layers and at a lateral end of the channel layers, and a gate structure including a gate dielectric layer and a metal layer interposing the plurality of channel layers. The dummy structure is disposed at an active edge adjacent to an active region. A metal gate etching process is performed to remove the metal layer from the gate structure while the gate dielectric layer remains disposed at a channel layer-inner spacer interface. After performing the metal gate etching process, a dry etching process is performed to form a cut region along the active edge. The gate dielectric layer disposed at the channel layer-inner spacer interface prevents the dry etching process from damaging a source/drain feature within the adjacent active region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Multi-gate device and related methods","description":"A method of fabricating a semiconductor device includes providing a dummy structure having a plurality of channel layers, an inner spacer disposed between adjacent channels of the plurality of channel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296082","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296082","citation_suggestion":"Patentable. \"Multi-gate device and related methods\" (US-11296082). https://patentable.app/patents/US-11296082","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296082","json":"https://patentable.app/api/llm-context/US-11296082","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T21:21:48.671Z"}