{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296092","patent":{"patent_number":"US-11296092","title":"Semiconductor device with porous decoupling feature","assignee":null,"inventors":[],"filing_date":"2020-05-28T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The present application discloses a semiconductor device with porous decoupling features and the method for fabricating the semiconductor device with the porous decoupling features. The semiconductor device comprises: a substrate; a first conductive line positioned on the substrate and extend along a first direction; a first conductive line spacer positioned on a sidewall of the first conductive line; a bottom contact positioned adjacent to the first conductive line; a bottom contact spacer positioned on a sidewall of the bottom contact; and a porous insulating layer positioned between the first conductive line spacer and the bottom contact spacer; wherein a porosity of the porous insulating layer is between about 25% and about 100%."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with porous decoupling feature","description":"The present application discloses a semiconductor device with porous decoupling features and the method for fabricating the semiconductor device with the porous decoupling features. The semiconductor ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296092","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296092","citation_suggestion":"Patentable. \"Semiconductor device with porous decoupling feature\" (US-11296092). https://patentable.app/patents/US-11296092","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296092","json":"https://patentable.app/api/llm-context/US-11296092","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:07:25.337Z"}