{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296097","patent":{"patent_number":"US-11296097","title":"3D vertical NAND memory device including multiple select lines and control lines having different vertical spacing","assignee":null,"inventors":[],"filing_date":"2021-02-05T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G06F"],"num_claims":20,"abstract":"Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a pillar including a length, a memory cell string and control lines located along a first segment of the pillar, and select lines located along a second segment of the pillar. The control lines include at least a first control line and a second control line. The first control line is adjacent the second control line. The first control line is separated from the second control line by a first distance in a direction of the length of the pillar. The select lines include at least a first select line and a second select line. The first select line is separated from the second select line by a second distance in the direction of the length of the pillar. The second distance is less than the first distance."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"3D vertical NAND memory device including multiple select lines and control lines having different vertical spacing","description":"Some embodiments include apparatuses, and methods of forming and operating the apparatuses. Some of the apparatuses include a pillar including a length, a memory cell string and control lines located ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296097","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296097","citation_suggestion":"Patentable. \"3D vertical NAND memory device including multiple select lines and control lines having different vertical spacing\" (US-11296097). https://patentable.app/patents/US-11296097","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296097","json":"https://patentable.app/api/llm-context/US-11296097","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T09:39:36.339Z"}