{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296098","patent":{"patent_number":"US-11296098","title":"Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2019-12-02T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C"],"num_claims":18,"abstract":"The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile ternary memory device according to an embodiment of the present disclosure includes (a) forming a lower electrode on a substrate, (b) forming a two-dimensional ferroelectric material on the lower electrode, (c) forming a semiconductor on the two-dimensional ferroelectric material, and (d) forming an upper electrode on the semiconductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing the same","description":"The present disclosure relates to a nonvolatile ternary memory device using a two-dimensional ferroelectric material and a method of manufacturing the same. The method of manufacturing the nonvolatile","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296098","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296098","citation_suggestion":"Patentable. \"Nonvolatile ternary memory device using two-dimensional ferroelectric material and method of manufacturing the same\" (US-11296098). https://patentable.app/patents/US-11296098","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296098","json":"https://patentable.app/api/llm-context/US-11296098","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T13:44:26.776Z"}