{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296113","patent":{"patent_number":"US-11296113","title":"Three-dimensional memory device with vertical field effect transistors and method of making thereof","assignee":null,"inventors":[],"filing_date":"2020-08-31T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor structure includes at least one set of vertical field effect transistors embedded within dielectric material layers overlying a substrate. Each vertical field effect transistor includes a bottom doped semiconductor electrode, a vertical transistor channel, a cylindrical gate dielectric, and a top doped semiconductor electrode. A three-dimensional NAND memory array can be provided over the first field effect transistors, and can be electrically connected to the vertical field effect transistors via metal interconnect structures. Alternatively, a three-dimensional NAND memory array can be formed on another substrate, which can be bonded to the substrate via metal-to-metal bonding. The vertical field effect transistors can be employed as switches for bit lines, word lines, or other components of the three-dimensional NAND memory array."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Three-dimensional memory device with vertical field effect transistors and method of making thereof","description":"A semiconductor structure includes at least one set of vertical field effect transistors embedded within dielectric material layers overlying a substrate. Each vertical field effect transistor include","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296113","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296113","citation_suggestion":"Patentable. \"Three-dimensional memory device with vertical field effect transistors and method of making thereof\" (US-11296113). https://patentable.app/patents/US-11296113","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296113","json":"https://patentable.app/api/llm-context/US-11296113","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:06:29.021Z"}