{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296146","patent":{"patent_number":"US-11296146","title":"Magnetoresistive memory device and method of manufacturing magnetoresistive memory device","assignee":null,"inventors":[],"filing_date":"2020-03-12T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":9,"abstract":"According to an embodiment, a magnetoresistive memory device includes a first conductor with a first surface. A first structure on the first surface of the first conductor includes a first ferromagnetic layer. An insulating layer is on the first structure. A second structure on the insulating layer includes a second ferromagnetic layer. A second conductor is in contact with the first surface of the first conductor and a side surface of the first structure. A first insulator on the second conductor covers a side surface of the insulating layer, and is in contact with the side surface of the first structure and a side surface of the second structure. A third conductor on the first insulator is in contact with the side surface of the second structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Magnetoresistive memory device and method of manufacturing magnetoresistive memory device","description":"According to an embodiment, a magnetoresistive memory device includes a first conductor with a first surface. A first structure on the first surface of the first conductor includes a first ferromagnet","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296146","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296146","citation_suggestion":"Patentable. \"Magnetoresistive memory device and method of manufacturing magnetoresistive memory device\" (US-11296146). https://patentable.app/patents/US-11296146","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296146","json":"https://patentable.app/api/llm-context/US-11296146","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T17:29:22.802Z"}