{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296148","patent":{"patent_number":"US-11296148","title":"Variable resistance memory devices","assignee":null,"inventors":[],"filing_date":"2020-09-22T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A variable resistance memory device including a substrate; first and second transistors on the substrate; first conductive lines on the transistors, each of the first conductive lines extending in a first direction, and the first conductive lines being spaced apart from each other; first contact plugs directly contacting substrate-facing surfaces of the first conductive lines, the first contact plugs being electrically connected to the first transistors, respectively; second conductive lines on the first conductive lines, each of the second conductive lines extending in the second direction, and the second conductive lines being spaced apart from each other; second contact plugs directly contacting substrate-facing surfaces of the second conductive lines, the second contact plugs being electrically connected to the second transistors, respectively; and memory units between the conductive lines, wherein each of the second contact plugs does not overlap with any of the memory units in the third direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Variable resistance memory devices","description":"A variable resistance memory device including a substrate; first and second transistors on the substrate; first conductive lines on the transistors, each of the first conductive lines extending in a f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296148","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296148","citation_suggestion":"Patentable. \"Variable resistance memory devices\" (US-11296148). https://patentable.app/patents/US-11296148","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296148","json":"https://patentable.app/api/llm-context/US-11296148","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:03:02.390Z"}