{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296192","patent":{"patent_number":"US-11296192","title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2019-10-23T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"A silicon carbide semiconductor device includes, sequentially, a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type provided on the second semiconductor layer, and a fourth semiconductor layer of a second conductivity type provided on the third semiconductor layer. A first electrode is provided on the first semiconductor layer, and a second electrode is provided on the fourth semiconductor layer. An impurity concentration of the second semiconductor layer is higher than that of the first semiconductor layer, and an impurity concentration of the third semiconductor layer is lower than that of the second semiconductor layer. The first semiconductor layer also contains, at a surface thereof in contact with the second semiconductor layer, a second impurity different from a first impurity that determines a conductivity type of the first semiconductor layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device","description":"A silicon carbide semiconductor device includes, sequentially, a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type provided on the fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296192","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296192","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device\" (US-11296192). https://patentable.app/patents/US-11296192","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296192","json":"https://patentable.app/api/llm-context/US-11296192","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T20:30:33.404Z"}