{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296198","patent":{"patent_number":"US-11296198","title":"Semiconductor structure with barrier layer and method for forming the same","assignee":null,"inventors":[],"filing_date":"2020-04-02T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor structure is provided. The method includes forming a gate structure over a fin structure, forming a source/drain structure in the fin structure and adjacent to the gate structure, forming a dielectric layer over the gate structure and the source/drain structure, and forming an opening in the dielectric layer to expose the source/drain structure. The method further includes depositing a barrier layer lining a sidewall surface of the opening and a top surface of the source/drain structure. The method further includes etching a portion of the barrier layer to expose the source/drain structure. The method further includes depositing a glue layer covering the sidewall surface of the opening and the source/drain structure in the opening. The method further includes forming a contact structure filling the opening in the dielectric layer. The contact structure is surrounded by the glue layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with barrier layer and method for forming the same","description":"A method for forming a semiconductor structure is provided. The method includes forming a gate structure over a fin structure, forming a source/drain structure in the fin structure and adjacent to the","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296198","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296198","citation_suggestion":"Patentable. \"Semiconductor structure with barrier layer and method for forming the same\" (US-11296198). https://patentable.app/patents/US-11296198","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296198","json":"https://patentable.app/api/llm-context/US-11296198","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T18:15:24.497Z"}