{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296203","patent":{"patent_number":"US-11296203","title":"Switching device having gate stack with low oxide growth","assignee":null,"inventors":[],"filing_date":"2017-12-26T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":22,"abstract":"An embodiment includes a system comprising: a switching device that includes a fin; and a source contact on a source, a gate contact on a channel, and a drain contact on a drain; wherein the gate contact includes: (a)(i) a first layer that includes oxygen, the first layer directly contacting the fin, (a)(ii) a second layer that includes a dielectric material, (c) a third layer that includes at least one of aluminum, titanium, ruthenium, zirconium, hafnium, tantalum, niobium, vanadium, thorium, barium, magnesium, cerium, and lanthanum, and (a)(iii) a fourth layer that includes a metal, wherein (b)(i) the source contact, the gate contact, and the drain contact are all on the fin, and (b)(ii) the second layer is between the first and fourth layers. Other embodiments are described herein."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Switching device having gate stack with low oxide growth","description":"An embodiment includes a system comprising: a switching device that includes a fin; and a source contact on a source, a gate contact on a channel, and a drain contact on a drain; wherein the gate cont","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296203","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296203","citation_suggestion":"Patentable. \"Switching device having gate stack with low oxide growth\" (US-11296203). https://patentable.app/patents/US-11296203","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296203","json":"https://patentable.app/api/llm-context/US-11296203","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T13:41:14.054Z"}