{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296211","patent":{"patent_number":"US-11296211","title":"Method for preparing semiconductor device with annular semiconductor fin","assignee":null,"inventors":[],"filing_date":"2020-06-24T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":4,"abstract":"A method for preparing a semiconductor device includes forming a ring structure over a semiconductor substrate, and etching the semiconductor substrate by using the ring structure as a mask to form an annular semiconductor fin. The method also includes epitaxially growing a first bottom source/drain structure within the annular semiconductor fin and a second bottom source/drain structure surrounding the annular semiconductor fin. The method further includes forming a first silicide layer over the first bottom source/drain structure and a second silicide layer over the second bottom source/drain structure. In addition, the method includes forming a first gate structure over the first silicide layer and a second gate structure over the second silicide layer, and epitaxially growing a top source/drain structure over the annular semiconductor fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for preparing semiconductor device with annular semiconductor fin","description":"A method for preparing a semiconductor device includes forming a ring structure over a semiconductor substrate, and etching the semiconductor substrate by using the ring structure as a mask to form an","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296211","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296211","citation_suggestion":"Patentable. \"Method for preparing semiconductor device with annular semiconductor fin\" (US-11296211). https://patentable.app/patents/US-11296211","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296211","json":"https://patentable.app/api/llm-context/US-11296211","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-31T16:50:07.085Z"}