{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11296224","patent":{"patent_number":"US-11296224","title":"Non-volatile polarization induced strain coupled 2D FET memory","assignee":null,"inventors":[],"filing_date":"2021-06-16T00:00:00.000Z","publication_date":"2022-04-05T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":22,"abstract":"A polarization induced strain coupled two dimensional field effect transistor (PoSt FET) memory cell is disclosed which includes a transistor including a source contact, a drain contact, a gate contact, a back contact, a channel disposed atop the gate contact, wherein the channel and the gate are separated by an electrically insulating material, and a piezoelectric (PE)/ferroelectric(FE) (PE/FE) layer disposed between the gate contact and the back contact and configured to store bit information in form of ferroelectric polarization (P), wherein a ratio of cross-sectional area of the channel to cross-sectional area of the PE/FE layer is between about 0.03 to about 0.07."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Non-volatile polarization induced strain coupled 2D FET memory","description":"A polarization induced strain coupled two dimensional field effect transistor (PoSt FET) memory cell is disclosed which includes a transistor including a source contact, a drain contact, a gate contac","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11296224","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11296224","citation_suggestion":"Patentable. \"Non-volatile polarization induced strain coupled 2D FET memory\" (US-11296224). https://patentable.app/patents/US-11296224","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11296224","json":"https://patentable.app/api/llm-context/US-11296224","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T16:21:48.547Z"}