{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-11300881","patent":{"patent_number":"US-11300881","title":"Line break repairing layer for extreme ultraviolet patterning stacks","assignee":null,"inventors":[],"filing_date":"2018-10-23T00:00:00.000Z","publication_date":"2022-04-12T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A photolithography patterning stack and method for repairing defects in the stack. The stack includes an organic planarization layer, a hardmask layer, and a plurality of patterned photoresist lines in contact with the hardmask layer. A plurality of trenches is situated between the plurality of patterned photoresist lines. Each trench exposes a portion of the hardmask layer. A repairing layer is formed in contact with and only bonded to surfaces of the plurality of patterned photoresist lines. The method includes forming a photolithographic patterning stack. The stack includes at least a hardmask layer formed on one or more underlayers and a photoresist layer formed in contact with the hardmask layer. The photoresist layer is patterned into a plurality of patterned portions. A repairing layer is formed in contact with and only bonded to surfaces of each patterned portion of the plurality of portions."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Line break repairing layer for extreme ultraviolet patterning stacks","description":"A photolithography patterning stack and method for repairing defects in the stack. The stack includes an organic planarization layer, a hardmask layer, and a plurality of patterned photoresist lines i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-11300881","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-11300881","citation_suggestion":"Patentable. \"Line break repairing layer for extreme ultraviolet patterning stacks\" (US-11300881). https://patentable.app/patents/US-11300881","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-11300881","json":"https://patentable.app/api/llm-context/US-11300881","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-05-30T08:48:43.297Z"}